PART |
Description |
Maker |
TC58BVG1S3HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
TC58BYG2S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
TH58BVG3S0HTAI0 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
TC58BVG2S0HTAI0 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
TC58BVG1S3HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
TC58BVG0S3HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
M381L6423DTM-CCC/C4 M381L3223DTM-CCC/C4 M368L6423D |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC 184pin缓冲模块56MbD为基础的非ECC的模4/72-bit / ECC
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
M391T2953BGZ0-CD5_CC M391T2953BGZ3-CD5_CC M378T335 |
64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240 TVS ZENER BIDIRECT 1500W 13V SMC TVS BIDIRECT 1500W 130V SMC 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KMM372F1600BK KMM372F1600BS KMM372F1680BK KMM372F1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V 16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic Samsung semiconductor
|
KMM372C1680BK KMM372C1600BK KMM372C1600BS KMM372C1 |
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
CXD8941BQ |
CMOS ECC and RLL 1-7 Encoder
|
ETC
|
KMM372C400CK KMM372C400CS KMM372C410CK KMM372C410C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
|
Samsung Electronic Samsung semiconductor
|